| PART |
Description |
Maker |
| BFU725F BFU725F_N1 BFU725F/N1 BFU725F-N1 BFU725FN1 |
NPN wideband silicon germanium RF transistor
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package
|
NXP Semiconductors
|
| BFR720L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFR750L3RH |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFP74009 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| BFP640F07 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
|
| BFU790F |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| BFU725F-N1 BFU725F11 BFU725F-N1-15 |
NPN wideband silicon germanium RF transistor
|
NXP Semiconductors
|
| RQG1004UPAQL RQG1004UP-TL-E |
35 mA, 3.5 V, NPN, SiGe, SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.55 MM HEIGHT, MFPAK-4
NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier
|
Renesas Electronics, Corp.
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| 2N549 2N3262 |
Trans GP BJT NPN 80V 7A 3-Pin(2 Tab) TO-66 Sleeve
Trans GP BJT NPN 90V 25A 3-Pin TO-63
|
New Jersey Semiconductor
|
| RQG2001URAQF RQG2001UR-TL-E |
NPN Silicon Germanium Transistor High Frequency Medium Power Amplifier
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| 2N2828 2N1647 |
Trans GP BJT NPN 15V 0.04A 4-Pin TO-72
Trans GP BJT NPN 50V 0.5A 3-Pin TO-39 Box
|
New Jersey Semiconductors
|
